Kim, “Analysis and Experiments for High Efficiency Class-F and Inverse Class-F Power Amplifiers,” in IEEE Transactions on Microwave Theory and Technique, Accepted for future publication, May 2006. Download figure: Standard image High-resolution image The drain current versus drain voltage ( Id Vd) characteristics of an insulated-gate HEMT and Schottky-gate HEMT, are shown in Figs. Trask, “class F amplifier loading networks: a unified design approach,” in IEEE MTT-S Int. (Color online) Two-terminal forward Ig Vg characteristics of insulated-gate InP-based HEMT and Schottky-gate HEMT. "A GaN HEMT Class F Amplifier at 2GHz with > 80% PAE." IEEE (2006). Raab, “Class-F power amplifiers with maximally flat waveforms,” IEEE Trans. Gao, “High Efficiency Class-F RF/Microwave Power Amplifiers”, IEEE Microwave Mag., pp. York, "MMIC Class-F Power Amplifiers using Field-Plated AlGaN/GaN HEMTS." Microwaves, Antennas and Propagation, IEE Proceedings.
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